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1T-SRAM™
Memory Technology Available on UMC's Deep Submicron
Logic Processes
Ultra-dense memory technology available to
UMC's foundry customers
SUNNYVALE, CA (April 25, 2000)
– Today MoSys, Inc. and UMC announced a long-term agreement
to provide UMC's foundry customers access to MoSys' ultra-dense
1T-SRAM embedded memories. Both companies have cooperated
on the development, porting and silicon-verification of MoSys'1T-SRAM
technology which is available on UMC's deep submicron logic
processes.
"UMC continues to set the technology
pace; planning to ship one-quarter million 0.18-micron
wafers this year and production qualifying 0.15-micron technology
this month. We are also expanding 0.18/0.15-micron capacity,
aggressively ramping the newest fleet of fabs in the industry,"
said Dr. Jim Ballingall, vice president of worldwide marketing
at UMC. "MoSys' 1T-SRAM technology provides our system-on-chip
customers with the capability to economically integrate megabytes
of high-performance memory on these industry-leading processes,
addressing a density segment between the typical densities
of our 6T-SRAM and embedded DRAM technologies."
Today's announcement extends
the ongoing cooperation between the companies under UMC's
Silicon Shuttle™ and Gold-IP™
programs in order to accelerate the availability of embedded
1T-SRAM memories. Now UMC's customers can rapidly obtain 1T-SRAM
macros customized to their requirements and optimized for
UMC's logic processes. With the 1T-SRAM technology, targeted
to UMC' processes, UMC's customers have a fast, time-to-market
approach for embedding high-density memories into their SoCs,
complementing the array of silicon-proven analog and digital
cores available in the UMC Gold IP ™ catalog.
"MoSys' 1T-SRAM embedded memory
is building tremendous success among the fabless semiconductor
companies," noted Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys, Inc. "We are excited
to extend our solutions, through this partnership, to UMC's
customers as we offer MoSys' unique memory architecture on
UMC's latest processes."
ABOUT 1T-SRAM
Available in densities up to 128Mbits,
MoSys' patented 1T-SRAM technology uses a single transistor
cell to achieve its exceptional density while maintaining
the refresh-free interface and low latency random memory access
cycle time associated with traditional six-transistor SRAM
cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces
much of the circuit complexity and extra cost associated with
using embedded DRAM. In addition to the exceptional performance
and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional
SRAM memories. 1T-SRAM technology is volume production proven
in millions of MoSys' discrete memory devices.
NOTE CONCERNING
FORWARD-LOOKING STATEMENTS
Some of the statements in the
foregoing announcement are forward looking within the meaning
of the U.S. Federal Securities laws, including statements
about future outsourcing, wafer capacity, technologies, business
relationships and market conditions. Investors are cautioned
that actual events and results could differ materially from
these statements as a result of a variety of factors, including
conditions in the overall semiconductor market and economy;
acceptance and demand for products; and technological and
development risks.
ABOUT MOSYS
MoSys, Inc. is the leading semiconductor
technology company specializing in innovative, high performance,
random access memories based on its patented 1T-SRAM architecture.
Founded in 1991, the company develops innovative memory technology
for licensing to semiconductor and systems companies. MoSys
also uses this technology to produce its own memory products.
The company's unique memory architecture has been proven in
the volume production of over 30 million memory devices.
Licensees that are adopting 1T-SRAM technology include tier
one electronics, semiconductor and foundry companies.
The company is headquartered at 1020 Stewart Drive, Sunnyvale,
California, 94086. More information on MoSys is available
at http://www.mosys.com.
Note
for Editors:
1T-SRAM is a trademark
of MoSys, Inc. All other trademarks or registered trademarks
are the property of their respective owners. ASICplus
and Gold IP are trademarks of UMC.
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